IPD50N06S409ATMA MOSFET MOSFET

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Name: IPD50N06S409ATMA MOSFET MOSFET
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : IPD50N06S409ATMA2

MOQ : 2500

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 60 V

Id - Continuous Drain Current : 50 A

Rds On - Drain-Source Resistance : 9 mOhms

Vgs - Gate-Source Voltage : - 20 V, + 20 V

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MOSFET MOSFET

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	47 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	71 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Series:	IPD50N06
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Height:	2.3 mm
Length:	6.5 mm
Product Type:	MOSFET
Rise Time:	40 ns
	2500

IPD50N06S409ATMA MOSFET MOSFET Images

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